Polar TM HiPerFET TM
Power MOSFET s
N-Channel Enhancement Mode
IXFH18N90P
IXFT18N90P
IXFV18N90P
IXFV18N90PS
V DSS
I D25
R DS(on)
t rr
=
=
900V
18A
600m Ω
300ns
Avalanche Rated
Fast Intrinsic Diode
TO-247 (IXFH)
G
D
S
D (TAB)
TO-268 (IXFT)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
900
900
± 30
± 40
V
V
V
V
G
PLUS220 (IXFV)
S
D (Tab)
I D25
T C = 25 ° C
18
A
I DM
I A
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
36
9
A
A
G
D
S
D (Tab)
E AS
dv/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
800
15
540
mJ
V/ns
W
PLUS220SMD (IXFV_S)
T J
T JM
T stg
T L
T SOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
-55 ... +150
150
-55 ... +150
300
260
° C
° C
° C
°C
°C
G
G = Gate
S = Source
Features
S
D (Tab)
D = Drain
Tab = Drain
M d
F C
Weight
Mounting Torque (TO-247)
Mounting Force (PLUS220)
TO-247
TO-268
1.13/10
11..65/2.5..14.6
6
4
Nm/lb.in.
N/lb.
g
g
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Diode
PLUS220 Types
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 1mA
4
Characteristic Values
Min. Typ. Max.
900
g
V
Advantages
High Power Density
Easy to Mount
Space Savings
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 100
V
nA
Applications
Switch-Mode and Resonant-Mode
I DSS
V DS = V DSS , V GS = 0V
T J = 125 ° C
25 μ A
1.5 mA
Power Supplies
DC-DC Converters
Laser Drivers
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
600
m Ω
AC and DC Motor Drives
Robotics and Servo Controls
? 2011 IXYS CORPORATION, All Rights Reserved
DS100057B(03/11)
相关PDF资料
IXFT20N60Q MOSFET N-CH 600V 20A TO-268
IXFT20N80P MOSFET N-CH 800V 20A TO-268
IXFT20N80Q MOSFET N-CH 800V 20A TO-268
IXFT21N50Q MOSFET N-CH 500V 21A TO-268
IXFT23N60Q MOSFET N-CH 600V 23A TO-268(D3)
IXFT23N80Q MOSFET N-CH 800V 23A TO-268(D3)
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相关代理商/技术参数
IXFT20N100P 功能描述:MOSFET 20 Amps 1000V 1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT20N60Q 功能描述:MOSFET 20 Amps 600V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT20N80P 功能描述:MOSFET 20 Amps 800V 0.52 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT20N80Q 功能描述:MOSFET 20 Amps 800V 0.42 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT21N50F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT21N50Q 功能描述:MOSFET 21 Amps 500V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT23N60Q 功能描述:MOSFET 23 Amps 600V 0.32W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFT23N80Q 功能描述:MOSFET 23 Amps 800V 0.40W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube